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Title: Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

Abstract

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260240
Patent Number(s):
9,383,452
Application Number:
14/352,538
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 24
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Li, Zheng, and Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States: N. p., 2016. Web.
Li, Zheng, & Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States.
Li, Zheng, and Chen, Wei. Tue . "Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays". United States. doi:. https://www.osti.gov/servlets/purl/1260240.
@article{osti_1260240,
title = {Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays},
author = {Li, Zheng and Chen, Wei},
abstractNote = {A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 05 00:00:00 EDT 2016},
month = {Tue Jul 05 00:00:00 EDT 2016}
}

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