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Title: Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

Abstract

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260240
Patent Number(s):
9,383,452
Application Number:
14/352,538
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
DOE Contract Number:
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 24
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Li, Zheng, and Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States: N. p., 2016. Web.
Li, Zheng, & Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States.
Li, Zheng, and Chen, Wei. 2016. "Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays". United States. doi:. https://www.osti.gov/servlets/purl/1260240.
@article{osti_1260240,
title = {Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays},
author = {Li, Zheng and Chen, Wei},
abstractNote = {A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Patent:

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  • A pair of operational amplifiers, one of which having a photoresistor feedback connecting the output of the amplifier to its inverting input. The non-inverting input of the last named amplifier being provided with a voltage developed by the second operational amplifier. The second amplifier serves to control the output of the first amplifier in accordance with changes in the output.
  • This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm{sup 2} large detector array with 20 {micro}m and 40 {micro}m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstratemore » spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.« less
  • An advanced large area silicon photodiode (and X-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decreasemore » of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacitance of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors.« less