Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays
Patent
·
OSTI ID:1260240
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- Patent Number(s):
- 9,383,452
- Application Number:
- 14/352,538
- OSTI ID:
- 1260240
- Resource Relation:
- Patent File Date: 2012 Oct 24
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems
Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems
Performance of Thin-Window Silicon Drift Detectors
Journal Article
·
Sat Oct 01 00:00:00 EDT 2011
· 2011 IEEE Nuclear Science Symposium Conference Record
·
OSTI ID:1260240
+8 more
Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems
Journal Article
·
Tue Nov 15 00:00:00 EST 2011
· 2011 IEEE Nuclear Science Symposium Record
·
OSTI ID:1260240
+8 more
Performance of Thin-Window Silicon Drift Detectors
Journal Article
·
Mon Oct 20 00:00:00 EDT 2008
·
OSTI ID:1260240
+8 more