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Title: Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems

Journal Article · · 2011 IEEE Nuclear Science Symposium Conference Record

We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE SC OFFICE OF HIGH ENERGY PHYSICS
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
1054610
Report Number(s):
BNL-96969-2012-JA
Journal Information:
2011 IEEE Nuclear Science Symposium Conference Record, Vol. 2011, Issue none; Conference: Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, Valencia (Spain), 23-29 Oct. 2011; ISSN 1082
Publisher:
IEEE
Country of Publication:
United States
Language:
English