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Dielectric Properties of BST/(Y2O3)x(ZrO2)1-x/BST Trilayer Films

Journal Article · · MRS Proceedings
DOI:https://doi.org/10.1557/opl.2011.151· OSTI ID:1258566

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure is studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1258566
Report Number(s):
NREL/CP-5200-53362
Journal Information:
MRS Proceedings, Journal Name: MRS Proceedings Vol. 1292; ISSN 1946-4274; ISSN applab
Publisher:
Materials Research Society (MRS)
Country of Publication:
United States
Language:
English

References (6)

Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films journal October 2010
Dielectric properties of YSZ high-k thin films fabricated at low temperature by pulsed laser deposition journal September 2003
Effect of uniform and periodic doping by Ce on the properties of barium strontium titanate thin films journal October 2007
Changes in the leakage currents in Ba0.8Sr0.2TiO3∕ZrO2 multilayers due to modulations in oxygen concentration journal November 2004
The dielectric properties of yttria-stabilized zirconia journal March 1989
Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites journal October 2002

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