Magnetron sputter-deposited multilayer (Ba{sub x}Sr{sub 1x})Ti{sub 1+y}O{sub 3+z} thin films for passive and active devices.
High permittivity (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z}(BST) thin films are being investigated for integration into charge storage dielectrics and electric-field tunable elements for high frequency devices. For the latter application, it is desirable to have BST capacitors with high tunability and low losses. Therefore, we investigated the use of multilayer BST thin films consisting of very low dielectric loss BST/electrode interfacial layers ((Ba+Sr)/Ti = 0.73) sandwiching a high tunability, high permittivity primary BST layer ((Ba+Sr)/Ti = 0.9). BST capacitors with multiple layers of controlled composition can be effectively produced insitu by magnetron sputter deposition, using a single stoichiometric target and controlling the layer composition by changing the total process gas (Ar+O<{sub 2}) pressure. The layered BST film capacitors exhibit simultaneous low loss (tan {Delta} = 0.005), high tunability (76%), high charge storage energy density (34 J/cm{sup 3}), low leakage, and high dielectric breakdown (>2.8 MV/cm).
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; EE; DOD
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 942903
- Report Number(s):
- ANL/MSD/JA-35760
- Journal Information:
- Integr. Ferroelectrics, Journal Name: Integr. Ferroelectrics Journal Issue: 1-4 ; 2001 Vol. 34; ISSN 1058-4587
- Country of Publication:
- United States
- Language:
- ENGLISH
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