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Title: GaAs thin films and methods of making and using the same

Abstract

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

Inventors:
; ; ;
Publication Date:
Research Org.:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1257206
Patent Number(s):
9,368,670
Application Number:
14/692,421
Assignee:
University of Oregon (Eugene, OR)
DOE Contract Number:  
EE0005957
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION

Citation Formats

Boettcher, Shannon, Ritenour, Andrew, Boucher, Jason, and Greenaway, Ann. GaAs thin films and methods of making and using the same. United States: N. p., 2016. Web.
Boettcher, Shannon, Ritenour, Andrew, Boucher, Jason, & Greenaway, Ann. GaAs thin films and methods of making and using the same. United States.
Boettcher, Shannon, Ritenour, Andrew, Boucher, Jason, and Greenaway, Ann. Tue . "GaAs thin films and methods of making and using the same". United States. https://www.osti.gov/servlets/purl/1257206.
@article{osti_1257206,
title = {GaAs thin films and methods of making and using the same},
author = {Boettcher, Shannon and Ritenour, Andrew and Boucher, Jason and Greenaway, Ann},
abstractNote = {Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.},
doi = {},
url = {https://www.osti.gov/biblio/1257206}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

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Works referenced in this record:

Homojunction GaAs solar cells grown by close space vapor transport
conference, June 2014

  • Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
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Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics
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Empirical low-field mobility model for III–V compounds applicable in device simulation codes
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