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GaAs thin films and methods of making and using the same

Patent ·
OSTI ID:1257206
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Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

Research Organization:
University of Oregon, Eugene, OR (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0005957
Assignee:
University of Oregon (Eugene, OR)
Patent Number(s):
9,368,670
Application Number:
14/692,421
OSTI ID:
1257206
Country of Publication:
United States
Language:
English

References (8)

Analysis of tandem III–V/SiGe devices grown on Si
  • Schmieder, Kenneth J.; Gerger, Andrew; Diaz, Martin
  • 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE Photovoltaic Specialists Conference https://doi.org/10.1109/PVSC.2012.6317764
conference June 2012
Homojunction GaAs solar cells grown by close space vapor transport
  • Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2014.6924959
conference June 2014
Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source conference May 2013
Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics journal January 2015
Empirical low-field mobility model for III–V compounds applicable in device simulation codes journal March 2000
Efficient n -GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source journal December 2011
Towards high-efficiency GaAs thin-film solar cells grown via close space vapor transport from a solid source conference June 2012
The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors journal January 1963

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