Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; Yusufaly, Tahir I.; Salehi, Maryam; Han, Myung-Geun; Zhu, Yimei; Vanderbilt, David; Oh, Seongshik

doi:10.1103/PhysRevB.93.125416

Tunable inverse topological heterostructure utilizing ${(B i_{1 - x} I n_{x})}_{2} S e_{3}$ and multichannel weak-antilocalization effect

Journal Article · Thu Mar 10 00:00:00 EST 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.93.125416· OSTI ID:1248807

Brahlek, Matthew J. ^[1]; Koirala, Nikesh ^[1]; Liu, Jianpeng ^[1]; Yusufaly, Tahir I. ^[1]; Salehi, Maryam ^[1]; Han, Myung-Geun ^[2]; Zhu, Yimei ^[2]; Vanderbilt, David ^[1]; Oh, Seongshik ^[1]

State Univ. of New Jersey, Piscataway, NJ (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi_1-xIn_x)₂Se₃ in between two layers of the TI Bi₂Se₃ using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi_1-xIn_x)₂Se₃ layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-98CH10886

OSTI ID:: 1248807

Alternate ID(s):: OSTI ID: 1242588

Report Number(s):: BNL--112062-2016-JA; KC0201010

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 93; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (30)

Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization Brahlek, Matthew; Koirala, Nikesh; Bansal, Namrata Solid State Communications, Vol. 215-216 https://doi.org/10.1016/j.ssc.2014.10.021	journal	July 2015
Surface State Transport and Ambipolar Electric Field Effect in Bi₂Se₃Nanodevices Steinberg, Hadar; Gardner, Dillon R.; Lee, Young S. Nano Letters, Vol. 10, Issue 12, p. 5032-5036 https://doi.org/10.1021/nl1032183	journal	December 2010
Weak Antilocalization in Bi ₂ (Se _x Te _{1– x} ) ₃ Nanoribbons and Nanoplates Cha, Judy J.; Kong, Desheng; Hong, Seung-Sae Nano Letters, Vol. 12, Issue 2 https://doi.org/10.1021/nl300018j	journal	January 2012
Crossover from 3D to 2D Quantum Transport in Bi ₂ Se ₃ /In ₂ Se ₃ Superlattices Zhao, Yanfei; Liu, Haiwen; Guo, Xin Nano Letters, Vol. 14, Issue 9 https://doi.org/10.1021/nl502220p	journal	August 2014
Exotic Topological Insulator States and Topological Phase Transitions in Sb ₂ Se ₃ –Bi ₂ Se ₃ Heterostructures Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong ACS Nano, Vol. 6, Issue 3 https://doi.org/10.1021/nn2045328	journal	February 2012
A topological Dirac insulator in a quantum spin Hall phase Hsieh, D.; Qian, D.; Wray, L. Nature, Vol. 452, Issue 7190, p. 970-974 https://doi.org/10.1038/nature06843	journal	April 2008
Topological surface states protected from backscattering by chiral spin texture Roushan, Pedram; Seo, Jungpil; Parker, Colin V. Nature, Vol. 460, Issue 7259, p. 1106-1109 https://doi.org/10.1038/nature08308	journal	August 2009
Coherent topological transport on the surface of Bi2Se3 Kim, Dohun; Syers, Paul; Butch, Nicholas P. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3040	journal	June 2013
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface Xia, Y.; Qian, D.; Hsieh, D. Nature Physics, Vol. 5, Issue 6, p. 398-402 https://doi.org/10.1038/nphys1274	journal	May 2009
Two-dimensional surface state in the quantum limit of a topological insulator Analytis, James G.; McDonald, Ross D.; Riggs, Scott C. Nature Physics, Vol. 6, Issue 12 https://doi.org/10.1038/nphys1861	journal	November 2010
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 Kim, Dohun; Cho, Sungjae; Butch, Nicholas P. Nature Physics, Vol. 8, Issue 6 https://doi.org/10.1038/nphys2286	journal	April 2012
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3 Wu, Liang; Brahlek, M.; Valdés Aguilar, R. Nature Physics, Vol. 9, Issue 7 https://doi.org/10.1038/nphys2647	journal	June 2013
Superlattices of Bi ₂ Se ₃ /In ₂ Se ₃ : Growth characteristics and structural properties Wang, Z. Y.; Guo, X.; Li, H. D. Applied Physics Letters, Vol. 99, Issue 2 https://doi.org/10.1063/1.3610971	journal	July 2011
Imperfections in amorphous chalcogenides. IV. A model of electrical conduction processes in amorphous and crystalline In 2 Se 3 Watanabe, Yuichi; Kaneko, Shuichi; Kawazoe, Hiroshi Physical Review B, Vol. 40, Issue 5 https://doi.org/10.1103/PhysRevB.40.3133	journal	August 1989
Strong surface scattering in ultrahigh-mobility Bi 2 Se 3 topological insulator crystals Butch, N. P.; Kirshenbaum, K.; Syers, P. Physical Review B, Vol. 81, Issue 24 https://doi.org/10.1103/PhysRevB.81.241301	journal	June 2010
Electron interaction-driven insulating ground state in Bi 2 Se 3 topological insulators in the two-dimensional limit Liu, Minhao; Chang, Cui-Zu; Zhang, Zuocheng Physical Review B, Vol. 83, Issue 16 https://doi.org/10.1103/PhysRevB.83.165440	journal	April 2011
Tunable surface conductivity in Bi 2 Se 3 revealed in diffusive electron transport Chen, J.; He, X. Y.; Wu, K. H. Physical Review B, Vol. 83, Issue 24 https://doi.org/10.1103/PhysRevB.83.241304	journal	June 2011
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi 2 Se 3 Kim, Yong Seung; Brahlek, Matthew; Bansal, Namrata Physical Review B, Vol. 84, Issue 7 https://doi.org/10.1103/PhysRevB.84.073109	journal	August 2011
Weak localization of bulk channels in topological insulator thin films Lu, Hai-Zhou; Shen, Shun-Qing Physical Review B, Vol. 84, Issue 12 https://doi.org/10.1103/PhysRevB.84.125138	journal	September 2011
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films Steinberg, H.; Laloë, J. -B.; Fatemi, V. Physical Review B, Vol. 84, Issue 23 https://doi.org/10.1103/PhysRevB.84.233101	journal	December 2011
Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling Garate, Ion; Glazman, Leonid Physical Review B, Vol. 86, Issue 3 https://doi.org/10.1103/PhysRevB.86.035422	journal	July 2012
Topological phase transitions in (Bi 1 − x In x ) 2 Se 3 and (Bi 1 − x Sb x ) 2 Se 3 Liu, Jianpeng; Vanderbilt, David Physical Review B, Vol. 88, Issue 22 https://doi.org/10.1103/PhysRevB.88.224202	journal	December 2013
Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi 2 Se 3 Checkelsky, J. G.; Hor, Y. S.; Cava, R. J. Physical Review Letters, Vol. 106, Issue 19 https://doi.org/10.1103/PhysRevLett.106.196801	journal	May 2011
Thickness-Independent Transport Channels in Topological Insulator Bi 2 Se 3 Thin Films Bansal, Namrata; Kim, Yong Seung; Brahlek, Matthew Physical Review Letters, Vol. 109, Issue 11 https://doi.org/10.1103/PhysRevLett.109.116804	journal	September 2012
Topological-Metal to Band-Insulator Transition in ( Bi 1 − x In x ) 2 Se 3 Thin Films Brahlek, Matthew; Bansal, Namrata; Koirala, Nikesh Physical Review Letters, Vol. 109, Issue 18 https://doi.org/10.1103/PhysRevLett.109.186403	journal	October 2012
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Bi 2 Se 3 Thin Films Brahlek, Matthew; Koirala, Nikesh; Salehi, Maryam Physical Review Letters, Vol. 113, Issue 2 https://doi.org/10.1103/PhysRevLett.113.026801	journal	July 2014
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Experimental Realization of a Three-Dimensional Topological Insulator, Bi₂Te₃ Chen, Y. L.; Analytis, J. G.; Chu, J.-H. Science, Vol. 325, Issue 5937, p. 178-181 https://doi.org/10.1126/science.1173034	journal	June 2009
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System Hikami, S.; Larkin, A. I.; Nagaoka, Y. Progress of Theoretical Physics, Vol. 63, Issue 2 https://doi.org/10.1143/PTP.63.707	journal	February 1980

Cited By (7)

Dephasing in strongly anisotropic black phosphorus Hemsworth, N.; Tayari, V.; Telesio, F. Physical Review B, Vol. 94, Issue 24 https://doi.org/10.1103/physrevb.94.245404	journal	December 2016
Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb 2 Te 3 / Bi 2 Te 3 heterojunctions Aramberri, H.; Muñoz, M. C. Physical Review B, Vol. 95, Issue 20 https://doi.org/10.1103/physrevb.95.205422	journal	May 2017
Intrinsic spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures Men'shov, V. N.; Shvets, I. A.; Tugushev, V. V. Physical Review B, Vol. 96, Issue 7 https://doi.org/10.1103/physrevb.96.075302	journal	August 2017
A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases Belopolski, Ilya; Xu, Su-Yang; Koirala, Nikesh Science Advances, Vol. 3, Issue 3 https://doi.org/10.1126/sciadv.1501692	journal	March 2017
Optical properties of (Bi _1-x In _x ) ₂ Se ₃ thin films Wang, Y.; Law, S. Optical Materials Express, Vol. 8, Issue 9 https://doi.org/10.1364/ome.8.002570	journal	January 2018
Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review Ginley, Theresa; Wang, Yong; Law, Stephanie Crystals, Vol. 6, Issue 11 https://doi.org/10.3390/cryst6110154	journal	November 2016
A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases Belopolski, Ilya; Xu, Su-Yang; Koirala, Nikesh arXiv https://doi.org/10.48550/arxiv.1703.04537	text	January 2017

Similar Records

Massive Suppression of Proximity Pairing in Topological

{({Bi}_{1 - x} {Sb}_{x})}_{2} {Te}_{3}

Films on Niobium

Journal Article · Thu Jun 11 20:00:00 EDT 2020 · Physical Review Letters · OSTI ID:1633111

Disorder-driven topological phase transition in

B i_{2} S e_{3}

films

Journal Article · Sun Oct 02 20:00:00 EDT 2016 · Physical Review B · OSTI ID:1336221

Topological semimetal to insulator quantum phase transition in the Zintl compounds

B a_{2} X (X = Si, Ge)

Journal Article · Wed Oct 12 20:00:00 EDT 2016 · Physical Review B · OSTI ID:1388449

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Tunable inverse topological heterostructure utilizing ( B i1-x Inx ) 2 Se3 and multichannel weak-antilocalization effect

Citation Formats

References (30)

Cited By (7)

Similar Records

Related Subjects

Tunable inverse topological heterostructure utilizing ${(B i_{1 - x} I n_{x})}_{2} S e_{3}$ and multichannel weak-antilocalization effect