Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; Zhang, Yu; Xiong, Kanglin; Yuan, Ge; Coltrin, Michael E.; Han, Jung

doi:10.1016/j.jcrysgro.2015.03.049

Title: Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2015.03.049· OSTI ID:1248427

Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; Zhang, Yu; Xiong, Kanglin; Yuan, Ge; Coltrin, Michael E.; Han, Jung

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001134

OSTI ID:: 1248427

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 426 Journal Issue: C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

Citation Metrics:

Cited by: 4 works

Citation information provided by
Web of Science

References (32)

Single-Crystal Germanium Growth on Amorphous Silicon McComber, Kevin A.; Duan, Xiaoman; Liu, Jifeng Advanced Functional Materials, Vol. 22, Issue 5 https://doi.org/10.1002/adfm.201102015	journal	December 2011
A theory for metalorganic vapor phase epitaxial selective growth on planar patterned substrates Fujii, Takuya; Ekawa, Mitsuru; Yamazaki, Susumu Journal of Crystal Growth, Vol. 146, Issue 1-4 https://doi.org/10.1016/0022-0248(94)00498-6	journal	January 1995
High quality GaAs on Si by conformal growth Pribat, D.; Gerard, B.; Dupuy, M. Applied Physics Letters, Vol. 60, Issue 17 https://doi.org/10.1063/1.107064	journal	April 1992
Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis Oh, Ho-jin; Sugiyama, Masakazu; Nakano, Yoshiaki Japanese Journal of Applied Physics, Vol. 42, Issue Part 2, No. 4A https://doi.org/10.1143/JJAP.42.L359	journal	April 2003
Die Gesetze der Molekularströmung und der inneren Reibungsströmung der Gase durch Röhren Knudsen, Martin Annalen der Physik, Vol. 333, Issue 1 https://doi.org/10.1002/andp.19093330106	journal	January 1909
Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers Leung, Benjamin; Song, Jie; Zhang, Yu Advanced Materials, Vol. 25, Issue 9 https://doi.org/10.1002/adma.201204047	journal	December 2012
On Gaseous Self-Diffusion in Long Capillary Tubes Pollard, W. G.; Present, R. D. Physical Review, Vol. 73, Issue 7 https://doi.org/10.1103/PhysRev.73.762	journal	April 1948
Experimental and theoretical analysis of shadow‐masked growth using organometallic vapor‐phase epitaxy: The reason for the absence of facetting Armour, E. A.; Sun, S. Z.; Zheng, K. Journal of Applied Physics, Vol. 77, Issue 2 https://doi.org/10.1063/1.359012	journal	January 1995
The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition Han, J.; Ng, T. -B.; Biefeld, R. M. Applied Physics Letters, Vol. 71, Issue 21 https://doi.org/10.1063/1.120263	journal	November 1997
Gallium Nitride Based Logpile Photonic Crystals Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju Nano Letters, Vol. 11, Issue 11 https://doi.org/10.1021/nl201867v	journal	November 2011
Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy Décobert, J.; Dupuis, N.; Lagrée, P. Y. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.005	journal	January 2007
GaN based nanorods for solid state lighting Li, Shunfeng; Waag, Andreas Journal of Applied Physics, Vol. 111, Issue 7 https://doi.org/10.1063/1.3694674	journal	April 2012
Knudsen Diffusion Through Cylindrical Tubes of Varying Radii: Theory and Monte Carlo Simulations Shi, Yong; Lee, Yong Taek; Kim, Albert S. Transport in Porous Media, Vol. 93, Issue 3 https://doi.org/10.1007/s11242-012-9966-3	journal	March 2012
Selective area growth of high quality InP on Si (001) substrates Wang, G.; Leys, M. R.; Loo, R. Applied Physics Letters, Vol. 97, Issue 12 https://doi.org/10.1063/1.3491554	journal	September 2010
Mass transport and kinetic limitations in MOCVD selective-area growth Coltrin, Michael E.; Mitchell, Christine C. Journal of Crystal Growth, Vol. 254, Issue 1-2 https://doi.org/10.1016/S0022-0248(03)01165-5	journal	June 2003
Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy Theodoropoulos, C.; Mountziaris, T. J.; Moffat, H. K. Journal of Crystal Growth, Vol. 217, Issue 1-2 https://doi.org/10.1016/S0022-0248(00)00402-4	journal	July 2000
Kinetics of GaAs growth by low pressure MO-CVD Heinecke, H.; Veuhoff, E.; Pütz, N. Journal of Electronic Materials, Vol. 13, Issue 5 https://doi.org/10.1007/BF02657928	journal	September 1984
Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits Coleman, J. J.; Lammert, R. M.; Osowski, M. L. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 3 https://doi.org/10.1109/2944.640641	journal	June 1997
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer Zhao, D. G.; Jiang, D. S.; Zhu, J. J. Journal of Crystal Growth, Vol. 303, Issue 2 https://doi.org/10.1016/j.jcrysgro.2007.01.019	journal	May 2007
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) Hiramatsu, Kazumasa; Nishiyama, Katsuya; Onishi, Masaru Journal of Crystal Growth, Vol. 221, Issue 1-4 https://doi.org/10.1016/S0022-0248(00)00707-7	journal	December 2000
Novel technique for Si epitaxial lateral overgrowth: Tunnel epitaxy Ogura, Atsushi; Fujimoto, Yuki Applied Physics Letters, Vol. 55, Issue 21 https://doi.org/10.1063/1.102061	journal	November 1989
Heteroepitaxy and selective area heteroepitaxy for silicon photonics Lourdudoss, Sebastian Current Opinion in Solid State and Materials Science, Vol. 16, Issue 2 https://doi.org/10.1016/j.cossms.2012.01.003	journal	April 2012
Analysis of two‐step‐growth conditions for GaN on an AlN buffer layer Sasaki, T.; Matsuoka, T. Journal of Applied Physics, Vol. 77, Issue 1 https://doi.org/10.1063/1.359368	journal	January 1995
Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission Shioda, T.; Tomita, Y.; Sugiyama, M. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4 https://doi.org/10.1109/JSTQE.2009.2015433	journal	July 2009
General Relationship for the Thermal Oxidation of Silicon Deal, B. E.; Grove, A. S. Journal of Applied Physics, Vol. 36, Issue 12 https://doi.org/10.1063/1.1713945	journal	December 1965
Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction Kachkanov, V.; Leung, B.; Song, J. Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep04651	journal	April 2014
Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH ₃ /H ₂ System: A Computational Fluid Dynamics Simulation Study Hirako, Akira; Kusakabe, Kazuhide; Ohkawa, Kazuhiro Japanese Journal of Applied Physics, Vol. 44, Issue 2 https://doi.org/10.1143/JJAP.44.874	journal	February 2005
Three dimensional devices fabricated by silicon epitaxial lateral overgrowth Neudeck, G. W.; Schubert, P. J.; Glenn, J. L. Journal of Electronic Materials, Vol. 19, Issue 10 https://doi.org/10.1007/BF02651990	journal	October 1990
High quality Ge on Si by epitaxial necking Langdo, T. A.; Leitz, C. W.; Currie, M. T. Applied Physics Letters, Vol. 76, Issue 25 https://doi.org/10.1063/1.126754	journal	June 2000
Epitaxial growth of three-dimensionally architectured optoelectronic devices Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P. Nature Materials, Vol. 10, Issue 9 https://doi.org/10.1038/nmat3071	journal	July 2011
Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD Thrush, E. J.; Gibbon, M. A.; Stagg, J. P. Journal of Crystal Growth, Vol. 124, Issue 1-4 https://doi.org/10.1016/0022-0248(92)90467-W	journal	November 1992
Effect of mask material on selective growth of GaN by RF-MBE Nagae, Yuki; Iwatsuki, Takenori; Shirai, Yuya Journal of Crystal Growth, Vol. 324, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.04.022	journal	June 2011

Similar Records

Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · J. Cryst. Growth · OSTI ID:1248427

Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; +5 more

Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

Journal Article · Fri Apr 11 00:00:00 EDT 2014 · Scientific Reports · OSTI ID:1248427

Kachkanov, V.; Leung, B.; Song, J.; +5 more

Analysis of Channel Confined Growth for Single-Crystalline GaN Layers on SiO2.

Journal Article · Sun Dec 01 00:00:00 EST 2013 · Crystal Growth&Design · OSTI ID:1248427

Coltrin, Michael E.; Leung, Benjamin; Tsai, Miao-Chan; +4 more

Title: Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Citation Formats

References (32)

Similar Records

Related Subjects