Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; Zhang, Yu; Xiong, Kanglin; Yuan, Ge; Coltrin, Michael E.; Han, Jung

doi:10.1016/j.jcrysgro.2015.03.049

Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2015.03.049· OSTI ID:1248427

Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; Zhang, Yu; Xiong, Kanglin; Yuan, Ge; Coltrin, Michael E.; Han, Jung

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001134

OSTI ID:: 1248427

Alternate ID(s):: OSTI ID: 1210869

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 426; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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