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Analysis of Channel Confined Growth for Single-Crystalline GaN Layers on SiO2.

Journal Article · Sun Dec 01 04:00:00 EST 2013 · Crystal Growth&Design

OSTI ID:1124236

Coltrin, Michael E.; Leung, Benjamin; Tsai, Miao-Chan; Song, Jie; Zhang, Yu; Yuan, Ge; Han, Jung

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1124236

Report Number(s):: SAND2013-10757J; 492888

Journal Information:: Crystal Growth&Design, Journal Name: Crystal Growth&Design

Country of Publication:: United States

Language:: English

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