Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

Kachkanov, V.; Leung, B.; Song, J.; Zhang, Y.; Tsai, M. -C.; Yuan, G.; Han, J.; O'Donnell, K. P.

doi:10.1038/srep04651

Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

Journal Article · Fri Apr 11 00:00:00 EDT 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep04651· OSTI ID:1624704

Kachkanov, V. ^[1]; Leung, B. ^[2]; Song, J. ^[2]; Zhang, Y. ^[2]; Tsai, M. -C. ^[2]; Yuan, G. ^[2]; Han, J. ^[2]; O'Donnell, K. P. ^[3]

Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Diamond Light Source, Ltd.; DOE/OSTI
Yale Univ., New Haven, CT (United States). Dept. of Electrical Engineering
Univ. of Strathclyde, Glasgow, Scotland (United Kingdom). Dept. of Physics

A method to grow high quality, single crystalline semiconductor material irrespective of the substrate would allow a cost-effective improvement to functionality and performance of optoelectronic devices. Recently, a novel type of substrate-insensitive growth process called Evolutionary Selection Selective Area Growth (ES-SAG) has been proposed. Here we report the use of X-ray microdiffraction to study the structural properties of GaN microcrystals grown by ES-SAG. Utilizing high resolution in both direct and reciprocal spaces, we have unraveled structural dynamics of GaN microcrystals in growth structures of different dimensions. It has been found that the geometric proportions of the growth constrictions play an important role: 2.6 mm and 4.5 mm wide growth tunnels favor the evolutionary selection mechanism, contrary to the case of 8.6 mm growth tunnels. It was also found that GaN microcrystal ensembles are dominated by slight tensile strain irrespective of growth tunnel shape.

View Accepted Manuscript (DOE)

Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001134

OSTI ID:: 1624704

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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