Regrowth and Selective Area Growth of GaN for Vertical Power Electronics
- Yale Univ., New Haven, CT (United States); Yale University
- Northwestern Univ., Evanston, IL (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
Gallium Nitride (GaN) has a great potential in high-power and high-frequency applications due to its wide energy gap and good transport property. So far all commercial GaN optoelectronic and electronic devices have planar junctions and heterostructures prepared by epitaxial growth. To take the advantage of the merits of GaN material properties, more sophisticated device configurations such as current-aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), and super-junction (SJ) devices require the ability to form in-plane, lateral junctions by selective area doping (SAD). In this project, we explored a novel approach of realizing SAD through selective-area etching (SAE) followed by selective-area growth (SAG).
- Research Organization:
- Yale Univ., New Haven, CT (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AR0000871
- OSTI ID:
- 2204717
- Report Number(s):
- DE--AR0000871
- Country of Publication:
- United States
- Language:
- English
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