Selective area doping of GaN toward high-power applications

Ferreyra, Romualdo Alejandro; Li, Bingjun; Wang, Sizhen; Han, Jung

doi:10.1088/1361-6463/acd19d

Selective area doping of GaN toward high-power applications

Journal Article · 13 June 2023 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/acd19d· OSTI ID:2418420

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OSTI

Abstract

Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0000871

OSTI ID:: 2418420

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 37 Vol. 56; ISSN 0022-3727

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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