Glancing-angle extended x-ray absorption fine structure study of strained InGaAs/GaAs heterostructures
- ICMA, CSIC-Universidad de Zaragoza, Facultad de Ciencias, Pza. S. Francisco s.n., 50009 Zaragoza (Spain)
- ICMAT-CNR Area della Ricerca di Roma, C.P. 10, 00016 Monterotondo Stanzione (Italy)
- ICMA, CSIC-Universidad de Zaragoza, Facultad de Ciecies, Pza. S. Francisco s.n., 50009 Zaragoza (Spain)
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Fondazione ``Ugo Bordoni,`` Via B. Castiglione 59, 00142 Roma (Italy)
The structural properties of strained InGaAs grown by molecular beam epitaxy on GaAs(100) substrates, have been studied by glancing-angle extended x-ray absorption fine structure (EXAFS). The very low incidence angle of the x-ray beam on the sample makes it possible to collect the signal coming from a thin quasi-surface layer allowing the study of a single strained sample built up by only 6 ML of InGaAs. The EXAFS results show that a slight deformation of the first shell Ga--As distance occurs and that the strain is accommodated also by bond-bending mechanism as deduced by the second and third coordination shells analysis. The lattice expands in the growth direction in agreement within the limits predicted by the elastic theory. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 124284
- Journal Information:
- Journal of Applied Physics, Vol. 78, Issue 11; Other Information: PBD: 1 Dec 1995
- Country of Publication:
- United States
- Language:
- English
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