New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- NRL consultant, Brookneal, VA (United States)
- Vanderbilt Univ., Nashville, TN (United States)
- NASA Goddard Space Flight Center, Greenbelt, MD (United States)
- IBM, T.J. Watson Research Center, Yorktown Heights, NY (United States)
In this study, we present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to penetrate a very thin buried oxide layer, these measurements were affected by far less energy loss, energy straggle, flux attrition, and angular scattering than previous datasets. The minimization of these common sources of experimental interference allows more direct interpretation of the data and deeper insight into SEU mechanisms. The results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low-energy proton-induced SEUs in these circuits.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1238649
- Alternate ID(s):
- OSTI ID: 1326916
OSTI ID: 1326917
- Report Number(s):
- SAND--2015-8869J; 614052
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 62; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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