22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Geissbühler, Jonas; Werner, Jérémie; Nicolas, Silvia Martin de; Barraud, Loris; Hessler-Wyser, Aïcha; Despeisse, Matthieu; Nicolay, Sylvain; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

doi:10.1063/1.4928747

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Journal Article · Mon Aug 24 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928747· OSTI ID:1229741

Geissbühler, Jonas ^[1]; Werner, Jérémie ^[2]; Nicolas, Silvia Martin de ^[2]; Barraud, Loris ^[3]; Hessler-Wyser, Aïcha ^[2]; Despeisse, Matthieu ^[3]; Nicolay, Sylvain ^[3]; Tomasi, Andrea ^[2]; Niesen, Bjoern ^[2]; De Wolf, Stefaan ^[2]; Ballif, Christophe ^[4]

Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland); Arizona State University
Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland)
CSEM PV-Center, Neuchatel (Switzerland)
Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland); CSEM PV-Center, Neuchatel (Switzerland)

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. Furthermore, we circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

View Accepted Manuscript (DOE)

Research Organization:: École Polytechnique Fédérale de Lausanne (Switzerland)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006335

OSTI ID:: 1229741

Alternate ID(s):: OSTI ID: 22489145

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Temperature-dependent interface stability of MoO ₃ /GaAs(001) hybrid structures Ashraf, Tanveer; Sarkar, Anirban; Grafeneder, Wolfgang Journal of Applied Physics, Vol. 124, Issue 21 https://doi.org/10.1063/1.5050859	journal	December 2018
Atomic layer deposited Zn _x Ni _1−x O: A thermally stable hole selective contact for silicon solar cells Zhang, Tian; Hossain, Md. Anower; Lee, Chang-Yeh Applied Physics Letters, Vol. 113, Issue 26 https://doi.org/10.1063/1.5056223	journal	December 2018
Metal-induced gap states in passivating metal/silicon contacts Sajjad, Muhammad; Yang, Xinbo; Altermatt, Pietro Applied Physics Letters, Vol. 114, Issue 7 https://doi.org/10.1063/1.5066423	journal	February 2019
Investigation of surface reactions in metal oxide on Si for efficient heterojunction Si solar cells Lee, Yong Hwan; Song, Hee-eun; Kim, Ka-Hyun APL Materials, Vol. 7, Issue 7 https://doi.org/10.1063/1.5100884	journal	July 2019
Hole selective materials and device structures of heterojunction solar cells: Recent assessment and future trends Wang, Zilei; Li, Peiyang; Liu, Zhaolang APL Materials, Vol. 7, Issue 11 https://doi.org/10.1063/1.5121327	journal	November 2019
Recent progress in silicon-based solid-state solar cells Mehmood, Haris; Tauqeer, Tauseef; Hussain, Shahzad International Journal of Electronics, Vol. 105, Issue 9 https://doi.org/10.1080/00207217.2018.1477191	journal	April 2018
Interface structure and composition of MoO 3 /GaAs(0 0 1) Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang Journal of Physics: Condensed Matter, Vol. 30, Issue 15 https://doi.org/10.1088/1361-648x/aab391	journal	March 2018
Thickness-modulated passivation properties of PEDOT:PSS layers over crystalline silicon wafers in back junction organic/silicon solar cells Zhang, Longfei; Wang, Zilei; Lin, Hao Nanotechnology, Vol. 30, Issue 19 https://doi.org/10.1088/1361-6528/ab012d	journal	February 2019
Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells Gerling, Luis G.; Voz, Cristobal; Alcubilla, Ramón Journal of Materials Research, Vol. 32, Issue 2 https://doi.org/10.1557/jmr.2016.453	journal	December 2016
Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts Yu, Cao; Xu, Shengzhi; Yao, Jianxi Crystals, Vol. 8, Issue 11 https://doi.org/10.3390/cryst8110430	journal	November 2018
Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells Ding, Jiangnan; Zhou, Yurong; Dong, Gangqiang arXiv https://doi.org/10.48550/arxiv.1804.02954	preprint	January 2018

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