22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Geissbühler, Jonas; Werner, Jérémie; Nicolas, Silvia Martin de; Barraud, Loris; Hessler-Wyser, Aïcha; Despeisse, Matthieu; Nicolay, Sylvain; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

doi:10.1063/1.4928747

Title: 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Journal Article · Mon Aug 24 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928747· OSTI ID:1229741

Geissbühler, Jonas ^[1]; Werner, Jérémie ^[1]; Nicolas, Silvia Martin de ^[1]; Barraud, Loris ^[2]; Hessler-Wyser, Aïcha ^[1]; Despeisse, Matthieu ^[2]; Nicolay, Sylvain ^[2]; Tomasi, Andrea ^[1]; Niesen, Bjoern ^[1]; De Wolf, Stefaan ^[1]; Ballif, Christophe ^[3]

Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland)
CSEM PV-Center, Neuchatel (Switzerland)
Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland); CSEM PV-Center, Neuchatel (Switzerland)

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. Furthermore, we circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

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Research Organization:: École Polytechnique Fédérale de Lausanne (Switzerland)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006335

OSTI ID:: 1229741

Journal Information:: Applied Physics Letters, Vol. 107, Issue 8; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 344 works

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Temperature-dependent interface stability of MoO ₃ /GaAs(001) hybrid structures Ashraf, Tanveer; Sarkar, Anirban; Grafeneder, Wolfgang Journal of Applied Physics, Vol. 124, Issue 21 https://doi.org/10.1063/1.5050859	journal	December 2018
Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells Ding, Jiangnan; Zhou, Yurong; Dong, Gangqiang arXiv https://doi.org/10.48550/arxiv.1804.02954	preprint	January 2018
ITO-free carrier-selective contact for crystalline silicon solar cells Choi, Deokjae; Yoon, Hyun; Kim, Ka-Hyun Journal of Materials Chemistry A, Vol. 7, Issue 5 https://doi.org/10.1039/c8ta11220g	journal	January 2019
Efficient silicon solar cells applying cuprous sulfide as hole-selective contact Jin, Lei; Cai, Lun; Chen, Danmin Journal of Materials Science, Vol. 54, Issue 19 https://doi.org/10.1007/s10853-019-03797-x	journal	July 2019
Review and assessment of photovoltaic performance of graphene/Si heterojunction solar cells Abdullah, Mohd Faizol; Hashim, Abdul Manaf Journal of Materials Science, Vol. 54, Issue 2 https://doi.org/10.1007/s10853-018-2947-3	journal	September 2018
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