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Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

Patent ·
OSTI ID:1227357
Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation
Patent Number(s):
9,202,657
Application Number:
14/340,012
OSTI ID:
1227357
Country of Publication:
United States
Language:
English

References (1)

An integrated field emission array for ion desorption journal May 2010

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