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Title: Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

Abstract

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1227357
Patent Number(s):
9,202,657
Application Number:
14/340,012
Assignee:
Sandia Corporation
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 24
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Resnick, Paul J., and Langlois, Eric. Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same. United States: N. p., 2015. Web.
Resnick, Paul J., & Langlois, Eric. Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same. United States.
Resnick, Paul J., and Langlois, Eric. Tue . "Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same". United States. https://www.osti.gov/servlets/purl/1227357.
@article{osti_1227357,
title = {Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same},
author = {Resnick, Paul J. and Langlois, Eric},
abstractNote = {Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {12}
}

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Works referenced in this record:

An integrated field emission array for ion desorption
journal, May 2010

  • Resnick, P. J.; Holland, C. E.; Schwoebel, P. R.
  • Microelectronic Engineering, Vol. 87, Issue 5-8, p. 1263-1265
  • DOI: 10.1016/j.mee.2009.11.036