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Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4935546· OSTI ID:1226510
 [1];  [2]
  1. Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Not Available
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1226510
Alternate ID(s):
OSTI ID: 22492955
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (26)

Ground and first excited states of excitons in a magnetic field journal July 1972
Electronic structure of GaSbAlSb superlattices journal January 1985
The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal January 2004
Band‐structure tailoring by electric field in a weakly coupled electron‐hole system journal April 1995
Band parameters for III–V compound semiconductors and their alloys journal June 2001
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures journal November 2009
Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures journal May 2011
Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers journal February 1997
Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors journal January 2013
Electric field dependence of optical absorption near the band gap of quantum-well structures journal July 1985
Possibility of an excitonic ground state in quantum wells journal August 1985
Magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure journal September 1992
Subband structures of strained AlSb/InAs/AlSb quantum wells journal August 1993
Effect of band nonparabolicity on the magnetoexciton binding energy in semiconductors journal November 1995
Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/ Al x Ga 1 − x Sb quantum wells journal January 1997
Engineering superfluidity in electron-hole double layers journal March 1998
Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field journal September 1999
Exciton wave function, binding energy, and lifetime in InAs/GaSb coupled quantum wells journal January 2000
Energy transfer of excitons between quantum wells separated by a wide barrier journal November 2000
Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field journal January 2012
Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells journal September 2011
Interplay of Exciton Condensation and the Quantum Spin Hall Effect in InAs / GaSb Bilayers journal April 2014
Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate journal July 1996
Landau-Level Hybridization and the Quantum Hall Effect in I n A s / ( A l S b ) / G a S b Electron-Hole Systems journal July 2004
Trapping Excitons in a Two-Dimensional In-Plane Harmonic Potential: Experimental Evidence for Equilibration of Indirect Excitons journal July 2006
Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures journal July 1990

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