Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

Kim, Yeongho; Ban, Keun-Yong; Zhang, Chaomin; Honsberg, Christiana B.

doi:10.1063/1.4933272

Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

Journal Article · Wed Oct 14 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933272· OSTI ID:1223565

^[1]; Ban, Keun-Yong ^[1]; Zhang, Chaomin ^[1]; Honsberg, Christiana B. ^[1]

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1223565

Alternate ID(s):: OSTI ID: 22482252

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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