Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Kim, Yeongho; Ban, Keun-Yong; Zhang, Chaomin; Kim, Jun Oh; Lee, Sang Jun; Honsberg, Christiana B.

doi:10.1063/1.4943182

Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Journal Article · Wed Mar 09 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943182· OSTI ID:1241416

Kim, Yeongho ^[1]; Ban, Keun-Yong ^[2]; Zhang, Chaomin ^[2]; ^[1]; Lee, Sang Jun ^[1]; Honsberg, Christiana B. ^[2]

Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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Sponsoring Organization:: USDOE

OSTI ID:: 1241416

Alternate ID(s):: OSTI ID: 22591420

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 108; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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