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Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4999437· OSTI ID:1375503
 [1];  [2];  [2];  [1];  [1];  [3];  [3]
  1. Division of Metrology for Future Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
  2. Department of Physics, Kangwon National University, Kangwon-Do 200-701, South Korea
  3. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Not Available
Sponsoring Organization:
USDOE
OSTI ID:
1375503
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 111; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (20)

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices journal February 2001
Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy journal July 2016
Many-body effects on modulation-doped InAs/GaAs quantum dots journal May 1997
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering journal January 1999
Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells journal November 2002
Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots journal June 2003
Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy journal December 2004
Quantum dot strain engineering of InAs∕InGaAs nanostructures journal January 2007
Model for intermediate band solar cells incorporating carrier transport and recombination journal March 2009
Submonolayer quantum dot infrared photodetector journal March 2009
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell journal September 2010
Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence journal September 1998
Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors journal January 2013
Carrier dynamics in type-II GaAsSb/GaAs quantum wells journal April 2012
Phonon broadening of excitons in GaAs/ Al x Ga 1 − x As quantum wells journal June 1995
Carrier relaxation and electronic structure in InAs self-assembled quantum dots journal October 1996
Impact of size, shape, and composition on piezoelectric effects and electronic properties of In ( Ga ) As ∕ Ga As quantum dots journal November 2007
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell journal December 2006
Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors journal March 2003
Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs journal October 2010

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