Silicon nanocrystal inks, films, and methods
Patent
·
OSTI ID:1213437
Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Regents of the University of Minnesota (Minneapolis, MN)
- Patent Number(s):
- 9,123,538
- Application Number:
- 13/870,554
- OSTI ID:
- 1213437
- Country of Publication:
- United States
- Language:
- English
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