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Silicon nanocrystal inks, films, and methods

Patent ·
OSTI ID:1213437
Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-06NA25396
Assignee:
Regents of the University of Minnesota (Minneapolis, MN)
Patent Number(s):
9,123,538
Application Number:
13/870,554
OSTI ID:
1213437
Country of Publication:
United States
Language:
English

References (44)

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