High‐Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

Nocua, José E.; Piazza, Fabrice; Weiner, Brad R.; Morell, Gerardo; Lu, ed., Songwei

doi:10.1155/2009/429360

High‐Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

Journal Article · Wed Dec 30 23:00:00 EST 2009 · Journal of Nanomaterials

DOI:https://doi.org/10.1155/2009/429360· OSTI ID:1198245

Nocua, José E.; Piazza, Fabrice; Weiner, Brad R.; Morell, Gerardo; Lu, ed., Songwei

Boron nitride (BN) nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high‐yield synthesis methods of pure BN nanostructures. Using borazine (B ₃ N ₃ H ₆ ) as chemical precursor and the hot‐filament chemical vapor deposition (HFCVD) technique, pure BN nanostructures with cross‐sectional sizes ranging between 20 and 50 nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD), their morphology and nanostructure was examined by (SEM) and (TEM), while their chemical composition was studied by (EDS), (FTIR), (EELS), and (XPS). Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure.

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Sponsoring Organization:: USDOE

OSTI ID:: 1198245

Journal Information:: Journal of Nanomaterials, Journal Name: Journal of Nanomaterials Journal Issue: 1 Vol. 2009; ISSN 1687-4110

Publisher:: Hindawi Publishing CorporationCopyright Statement

Country of Publication:: Egypt

Language:: English

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