High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.

Conference · Tue Aug 10 04:00:00 EDT 1999

OSTI ID:11797

Auciello, O H; Baldo, P; Baumann, P; Erck, R A; Giumarra, J; Im, J; Kaufman, D Y; Lanagan, M T; Pan, M J; Streiffer, S K; Zebrowski, J

Significant effort is presently focused on reducing the size and weight of power electronic modules. To achieve these goals in high-power capacitors, alternative materials and fabrication processes are needed. Thin film (<0.5 {micro}m) and bulk capacitors that use perovskite-based ferroelectric dielectrics are promising alternative technologies. Ferroelectrics possess high dielectric constants, thus offering substantial increases in volumetric capacitance. In thin film form, these materials display low loss and high breakdown strength. The unique properties of some of these materials, such as a nonlinear dielectric response or a high energy-storage capacity accompanying a phase change, can be exploited for power electronic capacitors. Prototype capacitors of two such materials, (Ba,Sr)TiO{sub 3} and PbZrO{sub 3}, have been fabricated in both thin film and bulk ceramic form. The influence of fabrication conditions on dielectric properties has been studied. Initial studies have demonstrated the viability of perovskite ferroelectrics for next-generation capacitor components.

• Research Organization: Argonne National Lab., IL (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 11797
• Report Number(s): ANL/ET/CP-98991
• Country of Publication: United States
• Language: English

Related Subjects

24 POWER TRANSMISSION AND DISTRIBUTION
36 MATERIALS SCIENCE
CAPACITORS
CERAMICS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ENERGY STORAGE
PEROVSKITE
POWER SYSTEMS
THIN FILMS