High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.
Significant effort is presently focused on reducing the size and weight of power electronic modules. To achieve these goals in high-power capacitors, alternative materials and fabrication processes are needed. Thin film (<0.5 {micro}m) and bulk capacitors that use perovskite-based ferroelectric dielectrics are promising alternative technologies. Ferroelectrics possess high dielectric constants, thus offering substantial increases in volumetric capacitance. In thin film form, these materials display low loss and high breakdown strength. The unique properties of some of these materials, such as a nonlinear dielectric response or a high energy-storage capacity accompanying a phase change, can be exploited for power electronic capacitors. Prototype capacitors of two such materials, (Ba,Sr)TiO{sub 3} and PbZrO{sub 3}, have been fabricated in both thin film and bulk ceramic form. The influence of fabrication conditions on dielectric properties has been studied. Initial studies have demonstrated the viability of perovskite ferroelectrics for next-generation capacitor components.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 11797
- Report Number(s):
- ANL/ET/CP-98991; TRN: AH200118%%287
- Resource Relation:
- Conference: Power Systems World (PSW)/Power Conversion and Intelligent Motion (PCIM)n '99, Chicago, IL (US), 11/06/1999--11/12/1999; Other Information: PBD: 10 Aug 1999
- Country of Publication:
- United States
- Language:
- English
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