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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Patent ·
OSTI ID:1179234
; ; ;

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Research Organization:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-08NT01578
Assignee:
Crystal IS, Inc. (Green Island, NY)
Patent Number(s):
9,028,612
Application Number:
13/173,213
OSTI ID:
1179234
Resource Relation:
Patent File Date: 2011 Jun 30
Country of Publication:
United States
Language:
English

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Light Emitting Devices with Improved Light Extraction Efficiency patent-application January 2008
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Light emitting packages and methods of making same patent-application March 2008
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Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same patent-application May 2008
Spatial localization of light-generating portions in LEDs patent-application June 2008
CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES patent-application June 2008
LIGHT EMITTING DEVICES WITH AN ELECTRICALLY ACTIVE TOP REFLECTOR CONTACT patent-application June 2008
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LIGHT-EMITTING APPARATUS AND METHOD OF PRODUCING THE SAME patent-application June 2008
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SEMICONDUCTOR LIGHT-EMITTING DEVICE patent-application October 2008
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Group III nitride-based compound semiconductor light emitting device patent-application February 2009
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LED with current confinement structure and surface roughening patent-application May 2009
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NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME patent-application June 2009
LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME patent-application June 2009
LIGHT EMITTING DEVICE patent-application July 2009
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Led with substrate modifications for enhanced light extraction and method of making same patent-application September 2009
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SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME patent-application October 2009
SEMICONDUCTOR LIGHT EMITTING DEVICE patent-application October 2009
LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF patent-application November 2009
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS patent-application November 2009
Light emitting elements, light emitting devices including light emitting elements and methods of manufacturing such light emitting elements and/or devices patent-application December 2009
LED WITH IMPROVED EXTERNAL LIGHT EXTRACTION EFFICIENCY patent-application December 2009
SEMICONDUCTOR LIGHT-EMITTING DEVICE patent-application December 2009
LIGHT EMITTING DEVICE patent-application January 2010
Diode having high brightness and method thereof patent-application January 2010
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING patent-application February 2010
BOND PAD DESIGN FOR ENHANCING LIGHT EXTRACTION FROM LED CHIPS patent-application February 2010
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS patent-application June 2010
Doped Aluminum Nitride Crystals and Methods of Making Them patent-application July 2010
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS patent-application October 2010
In-line Fluid Treatment by UV Radiation patent-application December 2010
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM patent-application January 2011
LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE patent-application January 2011
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE patent-application January 2011
POLYCRYSTALLINE ALUMINUM NITRIDE MATERIAL AND METHOD OF PRODUCTION THEREOF patent-application January 2012
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS patent-application May 2012
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM patent-application June 2013
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH patent-application June 2013
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE patent-application March 2014
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM patent-application April 2014
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES patent-application July 2014
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM patent-application August 2014
PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR CONTACTS patent-application September 2014
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  • Bradley, S. T.; Goss, S. H.; Brillson, L. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6 https://doi.org/10.1116/1.1627331
journal January 2003
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Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns journal July 2011
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Reduction of oxygen contamination in AlN journal December 2003
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Seeded growth of AlN bulk single crystals by sublimation journal June 2002
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