Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Displacement damage caused by gamma-rays and neutrons on Au and Se.

Technical Report ·
DOI:https://doi.org/10.2172/1177090· OSTI ID:1177090
 [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
This report documents theoretical calculations of displacement damage produced by gamma rays and neutrons on various materials. The average energy of the gamma rays was 1.24 MeV and 1.0 MeV for the neutrons. The fluence of the gamma rays was 1.2e14 γ/cm2 , for the neutrons it was 1.0e12 n/cm2. The initial materials of interest were Au and Se. The total doses of the gamma ray exposures were in the 100 kRad range for both elements. An equivalent electron fluence was approximated to be the same as the gamma ray fluence over one gamma ray attenuation length in both materials and at the same 1.24 MeV energy. The maximum recoil energy of the Au and Se for these electrons was calculated relativisticaly to be 29 and 72 eV respectively. The relativisitic McKinley and Feshbach theory for the atomic recoil cross sections produced by the electrons were in the 10s of mbarn range and an upper limit for the concentration of Frenkel pairs for the gamma ray exposures for both elements was in the ppb range. The Robinson Energy Partioning Theory for non-ionizing energy loss (NIEL) of ions in solids was used to calculate the concentration of Frenkel pairs produced by the 1 MeV neutrons, and this concentration was also in the ppb range for both Au and Se. Low damage levels like this can have effects on minority carrier recombination in semiconductors, but are not expected to have any effect on metals like Au, or metalloids such as Se.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1177090
Report Number(s):
SAND2014--19440R; 540790
Country of Publication:
United States
Language:
English

Similar Records

Damage correlations in semiconductors exposed to gamma, electron and proton radiations
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:7130912

Radiation damage of InGaAs photodiodes by high energy particles
Book · Wed Dec 30 23:00:00 EST 1998 · OSTI ID:323883

A Code of Radiation Damage by Gamma - Paper 62
Conference · Mon Sep 15 00:00:00 EDT 2014 · OSTI ID:23082900