Synthesis of transparent conducting oxide coatings
Patent
·
OSTI ID:1176266
A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 7,709,056
- Application Number:
- 11/804,059
- OSTI ID:
- 1176266
- Country of Publication:
- United States
- Language:
- English
High-Mobility Ga0.47ln0.53As/lnP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium
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journal | March 1996 |
Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
|
journal | May 1999 |
Atomic Layer Deposition of In 2 O 3 Using Cyclopentadienyl Indium: A New Synthetic Route to Transparent Conducting Oxide Films
|
journal | July 2006 |
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