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Method for depositing transparent conducting oxides

Patent ·
OSTI ID:1495042
;
A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
10,131,991
Application Number:
12/895,305
OSTI ID:
1495042
Country of Publication:
United States
Language:
English

References (12)

Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition journal May 1999
Thin films of In2O3 by atomic layer deposition using In(acac)3 journal October 2009
Atomic Layer Deposition of In 2 O 3 Using Cyclopentadienyl Indium:  A New Synthetic Route to Transparent Conducting Oxide Films journal July 2006
Growth of In[sub 2]O[sub 3] Thin Films by Atomic Layer Epitaxy journal January 1994
AFM and STM studies on In2O3 and ITO thin films deposited by atomic layer epitaxy journal June 1996
ALE deposition of indium tin oxide thin films journal August 1995
Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin
  • Elam, Jeffrey W.; Baker, David A.; Hryn, Alexander J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 2 https://doi.org/10.1116/1.2835087
journal March 2008
Growth of Indium-Tin-Oxide Thin Films by Atomic Layer Epitaxy journal January 1995
High-Mobility Ga0.47ln0.53As/lnP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium journal March 1996
Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors journal February 2008
High-mobility Ga/sub 0.47/In/sub 0.53/As/InP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium conference January 1995
Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition journal August 2002

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Related Subjects

36 MATERIALS SCIENCE