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Title: Method for depositing transparent conducting oxides

Abstract

A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.

Inventors:
;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1495042
Patent Number(s):
10,131,991
Application Number:
12/895,305
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Elam, Jeffrey W., and Libera, Joseph A. Method for depositing transparent conducting oxides. United States: N. p., 2018. Web.
Elam, Jeffrey W., & Libera, Joseph A. Method for depositing transparent conducting oxides. United States.
Elam, Jeffrey W., and Libera, Joseph A. Tue . "Method for depositing transparent conducting oxides". United States. https://www.osti.gov/servlets/purl/1495042.
@article{osti_1495042,
title = {Method for depositing transparent conducting oxides},
author = {Elam, Jeffrey W. and Libera, Joseph A.},
abstractNote = {A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

Growth of Indium-Tin-Oxide Thin Films by Atomic Layer Epitaxy
journal, January 1995

  • Asikainen, Timo
  • Journal of The Electrochemical Society, Vol. 142, Issue 10
  • DOI: 10.1149/1.2050018

Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors
journal, February 2008

  • Elam, Jeffrey W.; Baker, David A.; Martinson, Alex B. F.
  • The Journal of Physical Chemistry C, Vol. 112, Issue 6
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Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
journal, August 2002

  • Elam, J. W.; Groner, M. D.; George, S. M.
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  • DOI: 10.1063/1.1490410

High-mobility Ga/sub 0.47/In/sub 0.53/As/InP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium
conference, January 1995

  • Usuda, M.; Sato, K.; Takeuchi, R.
  • Seventh International Conference on Indium Phosphide and Related Materials
  • DOI: 10.1109/ICIPRM.1995.522274

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin
journal, March 2008

  • Elam, Jeffrey W.; Baker, David A.; Hryn, Alexander J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 2
  • DOI: 10.1116/1.2835087