Method of junction formation for CIGS photovoltaic devices
Patent
·
OSTI ID:1175682
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Energy Photovoltaics (Princeton, NJ)
- Patent Number(s):
- 7,019,208
- Application Number:
- 10/251,337
- OSTI ID:
- 1175682
- Country of Publication:
- United States
- Language:
- English
Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells
|
journal | July 1999 |
The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method
|
conference | January 1996 |
Advances in large area CIGS technology
|
conference | September 2000 |
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