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Title: Method of junction formation for CIGS photovoltaic devices

Abstract

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175682
Patent Number(s):
7,019,208
Application Number:
10/251,337
Assignee:
Energy Photovoltaics (Princeton, NJ)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States: N. p., 2006. Web.
Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States.
Delahoy, Alan E. 2006. "Method of junction formation for CIGS photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1175682.
@article{osti_1175682,
title = {Method of junction formation for CIGS photovoltaic devices},
author = {Delahoy, Alan E.},
abstractNote = {Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.},
doi = {},
url = {https://www.osti.gov/biblio/1175682}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {3}
}

Works referenced in this record:

The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method
conference, January 1996