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Method of junction formation for CIGS photovoltaic devices

Patent ·
OSTI ID:1014055
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
Research Organization:
Energy Photovoltaics (Robbinsville, NJ)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Energy Photovoltaics (Robbinsville, NJ)
Patent Number(s):
7,652,209
Application Number:
US Patent Application 11/361,776
OSTI ID:
1014055
Country of Publication:
United States
Language:
English

References (4)

Development of Cu(InGa)Se 2 Thin Film Solar Cells with Cd-Free Buffer Layers journal January 1996
Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells journal July 1999
The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method conference January 1996
Advances in large area CIGS technology conference September 2000

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