Long wavelength vertical cavity surface emitting laser

Choquette, Kent D.; Klem, John F.

Long wavelength vertical cavity surface emitting laser

Patent · Tue Aug 16 00:00:00 EDT 2005

OSTI ID:1175469

Choquette, Kent D.; Klem, John F.

Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation

Patent Number(s):: 6,931,042

Application Number:: 09/871,492

OSTI ID:: 1175469

Country of Publication:: United States

Language:: English

References (7)

High-frequency modulation of oxide-confined vertical cavity surface emitting lasers Lear, K. L.; Mar, A.; Choquette, K. D. Electronics Letters, Vol. 32, Issue 5 https://doi.org/10.1049/el:19960334	journal	January 1996
Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers Ohnoki, N.; Koyama, F.; Iga, K. Journal of Crystal Growth, Vol. 195, Issue 1-4 https://doi.org/10.1016/S0022-0248(98)00631-9	journal	December 1998
Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance Kondow, Masahiko; Nakatsuka, Shin'ichi; Kitatani, Takeshi Japanese Journal of Applied Physics, Vol. 35, Issue Part 1, No. 11 https://doi.org/10.1143/JJAP.35.5711	journal	November 1996
1-mW CW-RT monolithic VCSEL at 1.55 μm Boucart, J.; Starck, C.; Gaborit, F. IEEE Photonics Technology Letters, Vol. 11, Issue 6 https://doi.org/10.1109/68.766766	journal	June 1999
Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron Sakai, Shiro; Ueta, Yoshihiro; Terauchi, Yoji Japanese Journal of Applied Physics, Vol. 32, Issue Part 1, No. 10 https://doi.org/10.1143/JJAP.32.4413	journal	October 1993
GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes Larson, M. C.; Kondow, M.; Kitatani, T. IEEE Photonics Technology Letters, Vol. 10, Issue 2 https://doi.org/10.1109/68.655353	journal	February 1998
Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source Kondow, Masahiko; Uomi, Kazuhisa; Hosomi, Kazuhiko Japanese Journal of Applied Physics, Vol. 33, Issue Part 2, No. 8A https://doi.org/10.1143/JJAP.33.L1056	journal	August 1994

Similar Records

Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

Journal Article · Mon Jun 05 00:00:00 EDT 2000 · Electronic Letters · OSTI ID:756436

Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

Journal Article · Fri Sep 15 00:00:00 EDT 2017 · Semiconductors · OSTI ID:22756388

InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance

Conference · Sun Jun 01 00:00:00 EDT 1997 · OSTI ID:486174

Related Subjects

47 OTHER INSTRUMENTATION

Long wavelength vertical cavity surface emitting laser

Citation Formats

References (7)

Similar Records

Related Subjects