Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
Patent
·
OSTI ID:1175234
A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.
- Research Organization:
- University of Maine, Toledo, OH (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- NERL-ZAF-8-17619-14
- Assignee:
- University of Maine (Toledo, OH)
- Patent Number(s):
- 6,852,614
- Application Number:
- 09/815,958
- OSTI ID:
- 1175234
- Country of Publication:
- United States
- Language:
- English
Heavy p ‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
|
journal | February 1993 |
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