Distributed bragg reflector using AIGaN/GaN

Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

Distributed bragg reflector using AIGaN/GaN

Patent · 10 August 2004

OSTI ID:1174984

Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 6,775,314

Application Number:: 09/998,114

OSTI ID:: 1174984

Country of Publication:: United States

Language:: English

References (8)

Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors Waldrip, K. E.; Han, J.; Figiel, J. J. Applied Physics Letters, Vol. 78, Issue 21, p. 3205-3207 https://doi.org/10.1063/1.1371240	journal	May 2001
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy Ng, H. M.; Moustakas, T. D.; Chu, S. N. G. Applied Physics Letters, Vol. 76, Issue 20 https://doi.org/10.1063/1.126483	journal	May 2000
Near ultraviolet optically pumped vertical cavity laser Zhou, Hailong; Diagne, M.; Makarona, E. Electronics Letters, Vol. 36, Issue 21, p. 1777-1779 https://doi.org/10.1049/el:20001257	journal	January 2000
Study of high quality GaN grown by OMVPE using an intermediate layer Benamara, M.; Liliental-Weber, Z.; Kellermann, S. Journal of Crystal Growth, Vol. 218, Issue 2-4 https://doi.org/10.1016/S0022-0248(00)00568-6	journal	September 2000
Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition Someya, T.; Arakawa, Y. Applied Physics Letters, Vol. 73, Issue 25 https://doi.org/10.1063/1.122852	journal	December 1998
High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy Langer, R.; Barski, A.; Simon, J. Applied Physics Letters, Vol. 74, Issue 24 https://doi.org/10.1063/1.123197	journal	June 1999
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser Krestnikov, I. L.; Lundin, W. V.; Sakharov, A. V. Applied Physics Letters, Vol. 75, Issue 9 https://doi.org/10.1063/1.124638	journal	August 1999
Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers Amano, H.; Iwaya, M.; Hayashi, N. MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue S1 https://doi.org/10.1557/S1092578300003550	journal	January 1999

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