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Title: Distributed bragg reflector using AIGaN/GaN

Abstract

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174984
Patent Number(s):
6,775,314
Application Number:
09/998,114
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Waldrip, Karen E., Lee, Stephen R., and Han, Jung. Distributed bragg reflector using AIGaN/GaN. United States: N. p., 2004. Web.
Waldrip, Karen E., Lee, Stephen R., & Han, Jung. Distributed bragg reflector using AIGaN/GaN. United States.
Waldrip, Karen E., Lee, Stephen R., and Han, Jung. Tue . "Distributed bragg reflector using AIGaN/GaN". United States. https://www.osti.gov/servlets/purl/1174984.
@article{osti_1174984,
title = {Distributed bragg reflector using AIGaN/GaN},
author = {Waldrip, Karen E. and Lee, Stephen R. and Han, Jung},
abstractNote = {A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {8}
}

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