Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Patent · Mon Jan 31 23:00:00 EST 2005

OSTI ID:1175230

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Research Organization:: Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC03-76SF00098

Assignee:: Cree Inc. (Goleta, CA)

Patent Number(s):: 6,849,882

Application Number:: 10/102,272

OSTI ID:: 1175230

Country of Publication:: United States

Language:: English

References (11)

An insulator-lined silicon substrate-via technology with high aspect ratio Wu, J. H.; Scholvin, J.; Del Alamo, J. A. IEEE Transactions on Electron Devices, Vol. 48, Issue 9, p. 2181-2183 https://doi.org/10.1109/16.944215	journal	January 2001
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates Ping, A. T.; Chen, Q.; Yang, J. W. IEEE Electron Device Letters, Vol. 19, Issue 2 https://doi.org/10.1109/55.658603	journal	February 1998
High-temperature performance of AlGaN/GaN HFETs on SiC substrates Gaska, R.; Chen, Q.; Yang, J. IEEE Electron Device Letters, Vol. 18, Issue 10 https://doi.org/10.1109/55.624930	journal	October 1997
High Al-content AlGaN/GaN MODFETs for ultrahigh performance Wu, Y. -F.; Keller, B. P.; Fini, P. IEEE Electron Device Letters, Vol. 19, Issue 2 https://doi.org/10.1109/55.658600	journal	February 1998
High-power 10-GHz operation of AlGaN HFET's on insulating SiC Sullivan, G. J.; Chen, M. Y.; Higgins, J. A. IEEE Electron Device Letters, Vol. 19, Issue 6 https://doi.org/10.1109/55.678543	journal	June 1998
Undoped AlGaN/GaN HEMTs for microwave power amplification Eastman, L. F.; Tilak, V.; Smart, J. IEEE Transactions on Electron Devices, Vol. 48, Issue 3 https://doi.org/10.1109/16.906439	journal	March 2001
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures Hsu, L.; Walukiewicz, W. Journal of Applied Physics, Vol. 89, Issue 3 https://doi.org/10.1063/1.1339858	journal	January 2001
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Gaska, R.; Yang, J. W.; Osinsky, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120852	journal	February 1998
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor Khan, M. A.; Hu, X.; Sumin, G. IEEE Electron Device Letters, Vol. 21, Issue 2 https://doi.org/10.1109/55.821668	journal	February 2000
Monte Carlo simulation of electron transport in gallium nitride Gelmont, B.; Kim, K.; Shur, M. Journal of Applied Physics, Vol. 74, Issue 3 https://doi.org/10.1063/1.354787	journal	August 1993
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy Micovic, M.; Kurdoghlian, A.; Janke, P. IEEE Transactions on Electron Devices, Vol. 48, Issue 3 https://doi.org/10.1109/16.906456	journal	March 2001

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