Electrostatic MEMS devices with high reliability
Patent
·
OSTI ID:1170735
The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-02ER46016
- Assignee:
- Goldsmith,Charles L. (Plano, TX)
- Patent Number(s):
- 8,963,659
- Application Number:
- 13/114,945
- OSTI ID:
- 1170735
- Country of Publication:
- United States
- Language:
- English
Performance of low-loss RF MEMS capacitive switches
|
journal | January 1998 |
Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
|
journal | January 2006 |
Micromechanical membrane switches for microwave applications
|
conference | January 1995 |
Temperature Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
|
conference | June 2006 |
Characteristics of micromachined switches at microwave frequencies
|
conference | January 1996 |
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