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Title: Electrostatic MEMS devices with high reliability

Patent ·
OSTI ID:1170735

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-02ER46016
Assignee:
Goldsmith,Charles L. (Plano, TX)
Patent Number(s):
8,963,659
Application Number:
13/114,945
OSTI ID:
1170735
Resource Relation:
Patent File Date: 2011 May 24
Country of Publication:
United States
Language:
English

References (13)

Microminiature, monolithic, variable electrical signal processor and apparatus including same patent June 1996
Micromechanical microwave switching patent April 1997
Method and apparatus for switching high frequency signals patent May 2002
Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor patent July 2002
Proximity micro-electro-mechanical system patent August 2003
Method and apparatus for switching high frequency signals patent March 2004
Capacitive type microelectromechanical RF switch patent August 2004
Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices patent November 2004
Micromechanical membrane switches for microwave applications conference January 1995
Characteristics of micromachined switches at microwave frequencies conference January 1996
Performance of low-loss RF MEMS capacitive switches journal January 1998
Temperature Acceleration of Dielectric Charging in RF MEMS Capacitive Switches conference June 2006
Acceleration of Dielectric Charging in RF MEMS Capacitive Switches journal January 2006

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