Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

Technical Report · Sat Nov 01 00:00:00 EDT 2014

DOI:https://doi.org/10.2172/1163879· OSTI ID:1163879

Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Baca, Albert G.; Allerman, Andrew A.

We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1163879
• Report Number(s): SAND2014-19512; 541026
• Country of Publication: United States
• Language: English