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Ultrafast transient grating radiation to optical image converter

Patent ·
OSTI ID:1163194
A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344;
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
8,879,137
Application Number:
13/423,498
OSTI ID:
1163194
Country of Publication:
United States
Language:
English

References (12)

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A femtosecond X-ray/optical cross-correlator journal February 2008
Optical scatter in epitaxial semiconductor multilayers journal April 1991
Subpicosecond carrier lifetimes in radiation‐damaged GaAs journal April 1991
X-ray detection by direct modulation of an optical probe beam—Radsensor: Progress on development for imaging applications journal October 2004
Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors journal July 1981
Room-Temperature Optical Nonlinearities in GaAs journal November 1986
Measurements of the intrinsic rise times of common inorganic scintillators journal June 2000
X-ray detection using the quantum-well exciton nonlinearity journal January 1990
RadSensor: x-ray detection by direct modulation of an optical probe beam conference January 2004
Etalon time response limitations as calculated from frequency analysis journal January 1993
Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe journal January 1992

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