Ultrafast laser-induced changes in optical properties of semiconductors
Journal Article
·
· Journal of Applied Physics
- Institute of High Performance Computing, 1 Fusionopolis Way, 16-16 Connexis, 138632 (Singapore)
We study the effect of laser radiation on optical properties of semiconductors of industrial interest. The material is pumped with a laser of chosen central frequency, for which the absorption is maximal, thus inducing electron dynamics, which modifies the optical properties. By using an improved theoretical model, we study ultrafast dynamic changes in the refraction index and reflectivity corresponding to a wide frequency-interval of probing radiation and identify that interval where these optical changes are most significant.
- OSTI ID:
- 22036838
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 111; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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