SiC Diode Test Data
Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.
- Research Organization:
- DOE Geothermal Data Repository; Sandia National Laboratories
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Geothermal Technologies Office (EE-4G)
- Contributing Organization:
- Sandia National Laboratories
- OSTI ID:
- 1157514
- Report Number(s):
- 441
- Availability:
- GDRHelp@EE.Doe.Gov
- Country of Publication:
- United States
- Language:
- English
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