Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Scalable quantum computer architecture with coupled donor-quantum dot qubits

Patent ·
OSTI ID:1150828

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Research Organization:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,816,325
Application Number:
13/645,291
OSTI ID:
1150828
Country of Publication:
United States
Language:
English

References (32)

Global control and fast solid-state donor electron spin quantum computing journal July 2005
Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot journal March 2010
Hybrid Solid-State Qubits: The Powerful Role of Electron Spins journal March 2011
Natural and artificial atoms for quantum computation journal September 2011
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots journal August 2011
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry journal July 2011
The Physical Implementation of Quantum Computation journal September 2000
Silicon quantum computation based on magnetic dipolar coupling journal November 2004
Quantum computation with doped silicon cavities journal February 2010
Tunable Spin Loading and T 1 of a Silicon Spin Qubit Measured by Single-Shot Readout journal April 2011
Single-shot readout of an electron spin in silicon journal September 2010
Detection of low energy single ion impacts in micron scale transistors at room temperature journal November 2007
Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface journal May 2007
Critical issues in the formation of quantum computer test structures by ion implantation
  • Schenkel, T.; Lo, C. C.; Weis, C. D.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 16, p. 2563-2566 https://doi.org/10.1016/j.nimb.2009.05.061
journal August 2009
Optimal quantum multiparameter estimation and application to dipole- and exchange-coupled qubits journal June 2009
Electron spin coherence exceeding seconds in high-purity silicon journal December 2011
Solid-state quantum memory using the 31P nuclear spin journal October 2008
Mesoscopic cavity quantum electrodynamics with quantum dots journal April 2004
Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures journal June 2000
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots journal September 2005
Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach journal February 2003
Mapping of ion beam induced current changes in FinFETs
  • Weis, C. D.; Schuh, A.; Batra, A.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 8-9, p. 1222-1225 https://doi.org/10.1016/j.nimb.2009.01.019
journal May 2009
Spin relaxation and coherence times for electrons at the Si / SiO 2 interface journal November 2010
A silicon-based nuclear spin quantum computer journal May 1998
Device fabrication and transport measurements of FinFETs built with 28 Si SOI wafers toward donor qubits in silicon journal September 2009
Atomistic simulations of adiabatic coherent electron transport in triple donor systems journal July 2009
Toward a scalable, silicon-based quantum computing architecture journal November 2003
Quantum computation with quantum dots journal January 1998
Single atom doping for quantum device development in diamond and silicon
  • Weis, C. D.; Schuh, A.; Batra, A.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 6 https://doi.org/10.1116/1.2968614
journal November 2008
Heisenberg spin bus as a robust transmission line for quantum-state transfer journal August 2011
Spins in few-electron quantum dots journal October 2007
Quantum computing on long-lived donor states of Li in Si journal August 2005

Similar Records

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
Journal Article · Wed Jan 13 23:00:00 EST 2016 · Physical Review B · OSTI ID:1379035

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
Patent · Tue Jul 06 00:00:00 EDT 2010 · OSTI ID:1013037

Related Subjects