Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Forrest, Stephen R; Wei, Guodan

Title: Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Patent · Tue Jul 06 00:00:00 EDT 2010

OSTI ID:1013037

Forrest, Stephen R ^[1]; Wei, Guodan ^[1]

Ann Arbor, MI

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

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Research Organization:: Princeton Univ., NJ (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: XAT-5-33636-03

Assignee:: The Trustees of Princeton University (Princeton, NJ)

Patent Number(s):: 7,750,425

Application Number:: 11/598,006

OSTI ID:: 1013037

Country of Publication:: United States

Language:: English

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