Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

Pica, G.; Lovett, B. W.; Bhatt, R. N.; Schenkel, T.; Lyon, S. A.

doi:10.1103/PhysRevB.93.035306

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

Journal Article · Wed Jan 13 23:00:00 EST 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.93.035306· OSTI ID:1379035

Pica, G. ^[1]; Lovett, B. W. ^[1]; Bhatt, R. N. ^[2]; Schenkel, T. ^[3]; Lyon, S. A. ^[2]

University of St. Andrews (United Kingdom). SUPA, School of Physics and Astronomy
Princeton Univ., NJ (United States). Deptartment of Electrical Engineering
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Ion Beam Technology Group

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. In this work, we present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. In conclusion, we use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Fusion Energy Sciences (FES) (SC-24); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231; SC0002140

OSTI ID:: 1379035

Alternate ID(s):: OSTI ID: 1235641

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 3 Vol. 93; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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