Computational Analysis of Breakdown Voltage Enhancement for AlGaN/GaN HEMTs through Optimal Pairing of Deep Level Impurity Density and Contact Design.
Journal Article
·
· Solid State Electronics
OSTI ID:1145376
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1145376
- Report Number(s):
- SAND2013-1140J; 445645
- Journal Information:
- Solid State Electronics, Journal Name: Solid State Electronics
- Country of Publication:
- United States
- Language:
- English
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