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Performance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.

Conference ·
DOI:https://doi.org/10.4071/HITEC-WP16· OSTI ID:1141024

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1141024
Report Number(s):
SAND2014-2220C; 505424
Country of Publication:
United States
Language:
English

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