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U.S. Department of Energy
Office of Scientific and Technical Information

erformance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.

Conference ·
OSTI ID:1145634
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1145634
Report Number(s):
SAND2014-4075C; 518027
Country of Publication:
United States
Language:
English

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