A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors.
Conference
·
OSTI ID:1124316
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1124316
- Report Number(s):
- SAND2010-2260C; 493070
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors.
A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors.
Radiation damage in bipolar junction transistors (BJTs).
Journal Article
·
Thu Jul 01 00:00:00 EDT 2010
· IEEE Transactions on Nuclear Science
·
OSTI ID:1122953
A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors.
Journal Article
·
Fri Oct 01 00:00:00 EDT 2010
· IEEE Transactions on Nuclear Science
·
OSTI ID:1121768
Radiation damage in bipolar junction transistors (BJTs).
Conference
·
Sun Jul 01 00:00:00 EDT 2012
·
OSTI ID:1686331