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A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors.

Journal Article · Thu Jul 01 00:00:00 EDT 2010 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2010.2086483· OSTI ID:1122953

Keiter, Eric Richard; Russo, Thomas V.; Hembree, Charles E.; Kambour, Kenneth E.

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1122953

Report Number(s):: SAND2010-4773J; 491909

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science; ISSN 0018-9499

Country of Publication:: United States

Language:: English

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