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Hetero-junction photovoltaic device and method of fabricating the device

Patent ·
OSTI ID:1119688
; ; ;
A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.
Research Organization:
ORNL (Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States))
Sponsoring Organization:
USDOE
Assignee:
UT-Battelle, LLC (Oak Ridge, TN); University of Tennessee Research Foundation (Knoxville, TN)
Patent Number(s):
8,647,915
Application Number:
12/974,425
OSTI ID:
1119688
Country of Publication:
United States
Language:
English

References (5)

Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications journal January 2009
“Quantum Coaxial Cables” for Solar Energy Harvesting journal May 2007
Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells journal December 2008
p-n junction heterostructure device physics model of a four junction solar cell conference September 2006
Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection journal August 2009

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